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采用离子注入硅及Nd:YAG连续激光退火制备厘米波P~+nn~+结构雪崩二极管.器件输出功率达1.25W,效率达7.7％.与热退火工艺结果进行比较.讨论了将连续激光退火用于制备毫米波雪崩管的有利方面.
The centrosymmetric P ~ + nn ~ + structure avalanche diode was fabricated by ion implantation of silicon and Nd: YAG continuous laser annealing. The output power of the device was 1.25W with an efficiency of 7.7% .Compared with the results of thermal annealing process, Advantageous aspects for preparing millimeter-wave avalanche tubes.