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用低压 MOCVD 法生长了 n 型 GaN 薄膜,对其肖特基势垒进行了表征和推导。真空度低于1×10~(-6)Torr 时,用电子束蒸发淀积 Pt 或 Pd 薄层,形成肖特基接触。n-GaN 薄膜上的 Pt 肖特基势垒高度,用电流(应为电容——校者注)-电压法(C-V)和电流密度-温度法(J-T)测量分别是1.04和1.03eV。同样地基于 C-V 和 J-T 测量方法,测得的 n-GaN 上的 Pd 势垒高度分别为0.94和0.91eV。在实验中观测到的 Pt 和 Pd 肖特基特性与以前报道的 Au 和 Ti 的肖特基特性进行了比较。
An n-type GaN thin film was grown by low-pressure MOCVD and its Schottky barrier was characterized and deduced. When the degree of vacuum is less than 1 × 10 -6 Torr, a Pt or Pd thin layer is deposited by electron beam evaporation to form a Schottky contact. The Pt Schottky barrier height on the n-GaN film was 1.04 and 1.03 eV, measured with current (which should be a capacitor-to-note) -voltage method (C-V) and current density- temperature method (J-T) Also based on the C-V and J-T measurement methods, the measured Pd barrier heights on n-GaN were 0.94 and 0.91 eV, respectively. The observed Pt and Pd Schottky properties in experiments were compared with the previously reported Schottky properties of Au and Ti.