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本文用由于禁带变窄引起的吸收边漂移造成的电子吸收来研究了砷化镓高功率高速光导开关的延迟时间 ,给出了初始开态场、照射激光波长和温度对延迟时间的影响的简单公式 .结果表明开关的半导体片对照射激光的吸收因子增大了开关的延迟时间 ,在计算中应该加以考虑 .
In this paper, the delay time of GaAs high-power high-speed photoconductive switches was studied by the electron absorption caused by the absorption edge drift due to the narrow band gap. The effects of the initial on-state field, the wavelength and temperature of laser irradiation on the delay time The simple formula shows that the switching factor of the semiconductor laser irradiated by the laser increases the switching delay and should be considered in the calculation.