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本文进行了离子镀机理的研究。用俄歇电子谱仪测定了不同工艺的离子镀膜与基板界面的过度层；用急冷忽热试验法评定了不同工艺的离子镀膜与基板间的结合力，用扫描电镜观察了不同离子镀基板偏压的膜层组织形貌。通过实验证明了离子镀中基板偏压有着以下几点重要作用：加基板偏压可以清除基板表面的氧化物污染层，直流二极型离子镀可以使固态不互溶金属组成的膜－基界面形成“伪扩散层”，其膜－基界面结合力比空心阴极离子镀膜－基结合力高；直流二极型离子镀随着基板偏压的提高可以细化膜层织组、消除柱状晶，提高镀层致密度。
In this paper, ion plating mechanism. By Auger electron spectrometer, the overlay of interface between the ion plating film and the substrate was measured by different processes. The adhesion between the ion plating film and the substrate was evaluated by the method of rapid cooling test, the scanning electron microscopy Pressure of the film morphology. Experiments show that the substrate bias in ion plating has the following important roles: Adding substrate bias can remove the oxide layer on the surface of the substrate, and DC-DC ion plating can form a membrane-based interface composed of solid immiscible metals “Pseudo-diffusion layer” has higher film-substrate interface bonding strength than Hollow-cathode coating film-base bonding force. With the increase of substrate bias, the DC-ion plating can refine the film- Coating density.