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采用MOCVD技术在Si(111)衬底上生长GaN薄膜，以此材料制备成光导型Si基GaN紫外探测器。探测器的光谱响应表明，在紫外波段250－360nm有近于平坦的光电流响应，363nm附近有陡峭的截止边，357nm波长处5V偏压下的响应度高达6.9A/W。响应度与偏压的变化关系表明，4V以前为线性增加，5V后达到饱和。
The GaN film was grown on Si (111) substrate by MOCVD technique, which was used to prepare a photoconductive Si-based GaN UV detector. The spectral response of the detector shows near-flat photocurrent response in the 250-360 nm UV range with a sharp cut-off near 363 nm and a responsivity of 6.9 A / W at 5V bias at 357 nm. The relationship between responsivity and bias shows that 4V was linearly increased before reaching saturation after 5V.