采用一种简单的电化学沉积法 ,在三电极化学池中 ,以单一的硝酸锌水溶液作为电沉积液 ,制备了高光学质量的半导体ZnO薄膜。透射光谱测量表明其光学带隙为 3 35eV ,4 0 0～ 2 0 0 0nm波段的光学透过率大于 80 %。X射线衍射 (XRD)和原子力显微镜 (AFM)研究表明 ,ZnO薄膜为纤锌矿结构的无序多晶颗粒膜 ,微晶尺寸小于 2 5 0nm。当用 35 5nm的皮秒脉冲激光作为抽运源垂直入射薄膜表面时 ,可以检测到 4 0 0nm附近的近紫外受激发射光 ,其强度随入射强度呈超线性增长关系 ,阈值在 196 8kW /cm2 处 ,并且激光发射是多模的和各个方向的 ,还与被激发的面积有关 ,表现为随机激光发射机制 A simple electrochemical deposition method was used to fabricate a ZnO semiconductor thin film with high optical quality using a single zinc nitrate aqueous solution as the electrodeposition solution in a three-electrode chemical cell. Transmission spectroscopy measurements showed that the optical band gap was 355eV, and the optical transmission in the 400 ~ 20000nm band was greater than 80%. X-ray diffraction (XRD) and atomic force microscopy (AFM) studies show that the ZnO thin film is a wurtzite structured disordered polycrystalline grain with a crystallite size of less than 250 nm. When 35 5 nm picosecond pulsed laser is used as the source of pumping incident perpendicularly to the surface of the film, near-ultraviolet stimulated emission at around 400 nm can be detected and its intensity increases linearly with incident intensity with a threshold at 196 8 kW / cm2 , And laser emission is multi-mode and in all directions, but also with the area being excited, the performance of the random laser emission mechanism