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半导体超薄层外延是超晶格与量子阱研究的技术基础。化学束外延、原子层外延、迁移增强外延、选择区域外延、激光辅助外延和低温Si外延等是在分子束外延和金属有机化学气相沉积基础上发展起来的几种新型超薄层外延技术。本文着重介绍了这些外延工艺的生长机理及其研究进展。
Semiconductor thin-layer epitaxy is the technology foundation of superlattice and quantum well research. Chemical beam epitaxy, atomic layer epitaxy, migration enhancement epitaxy, selective area epitaxy, laser assisted epitaxy and low temperature Si epitaxy are new types of ultrathin layer epitaxial technology developed on the basis of molecular beam epitaxy and metal organic chemical vapor deposition. This paper focuses on the growth mechanism of these epitaxial processes and their research progress.