论文部分内容阅读
利用灰阶编码掩模实现光学邻近效应精细校正是改善光刻图形质量的有效方法 ,设计并利用电子束直写系统加工了用于实现邻近效应校正的灰阶编码掩模 ,首次在投影光刻系统上用这一方法实现了光学邻近效应校正 ,获得了满意的实验结果 ,在可加工 0 7微米的I线曝光装置上获得了经邻近效应校正的 0 5微米光刻线条。
The use of grayscale coding mask to realize the optical proximity effect fine correction is an effective method to improve the quality of the lithography pattern. The grayscale coding mask used to realize the proximity effect correction is designed and fabricated by electron beam direct writing system. By this method, the optical proximity correction is achieved and the satisfactory experimental results are obtained. The 0 5 μm lithography lines corrected by the proximity effect are obtained on the I line exposure device capable of processing 0 7 μm.