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铝栅化学机械平坦化(CMP)是实现高k介质/金属栅结构的关键技术,决定了芯片上器件性能的完整性、可靠性。针对铝的特性,以质量传递和温度传递理论作为依据,采用控制化学作用与机械作用相平衡的平坦化技术路线,研究碱性条件下铝栅化学机械抛光工艺参数对铝栅表面粗糙度的影响,以此确定铝栅粗抛过程的工艺参数。实验结果表明铝栅粗抛过程所需最优化工艺参数为:抛光头转速50 r/min,抛光液流量150 mL/min,抛光时间180 s,抛光机下压力3.0 psi(1 psi=6 895 Pa),此时原子力显微镜观察到的铝表面状态最好,表面粗糙度为2.08 nm,达到了较好的抛光效果。
Aluminum gate CMP (chemical mechanical planarization) is the key technology for realizing high-k dielectric / metal gate structure, which determines the integrity and reliability of device performance on the chip. According to the characteristics of aluminum, based on the theory of mass transfer and temperature transfer, the planarization technique that controls the chemical reaction and the mechanical action is used to study the influence of aluminum gate chemical mechanical polishing process parameters on the surface roughness of aluminum grid under alkaline conditions , In order to determine the aluminum gate rough throw process parameters. The experimental results show that the optimal process parameters for the roughing process are as follows: polishing head speed 50 r / min, polishing liquid flow rate 150 mL / min, polishing time 180 s, polishing machine pressure 3.0 psi (1 psi = 6 895 Pa ). At this time, the surface condition of the aluminum surface observed by AFM was the best, with a surface roughness of 2.08 nm, which achieved a good polishing effect.