论文部分内容阅读
采用分子束外延 (MBE)技术 ,在 Ga As(1 0 0 )衬底上生长了厚度从 0 .0 4 5到 1 .4μm的 Zn Se薄膜 .X射线衍射谱证实 ,随着薄膜厚度的增加 ,应变逐步弛豫 .测量了低温下样品的反射谱和光致发光谱 ,观察到轻重空穴的能级在不同应变下的分裂、移动和反转 ,以及激子极化激元 (Po-lariton)对反射谱的影响 .也观察到束缚激子发光随着薄膜厚度的变化规律 :束缚在中性受主杂质上的束缚激子发光 (I1峰 )随着薄膜厚度的增加逐渐变弱直至消失 ,而束缚在中性施主杂质上的束缚激子发光 (I2 峰 )则随着厚度增加逐渐增强 .
ZnSe thin films with thicknesses from0.045to1.4μm were grown on GaAs (100) substrates by molecular beam epitaxy (MBE) technique.The X-ray diffraction spectra confirmed that with the increase of film thickness , The strain gradually relaxed.Reflected spectra and photoluminescence spectra of the samples were measured at low temperature, the splitting, moving and reversing of the energy levels of light and heavy holes under different strains were observed, and the Po-lariton ) On the reflection spectrum was also observed.The variation of the bound exciton luminescence with the thickness of the film was also observed: the bound exciton luminescence (I1 peak) bound to the neutral acceptor impurity gradually weakened until the disappearance of the film thickness , While the bound exciton luminescence (I2 peak) bound to the neutral donor impurity gradually increases with increasing thickness.