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在250和400℃之间用放射示踪剂研究了Hg_(1-x)Cd_xTe的汞自扩散,发现扩散分布有两个分量,用接触式自动射线显迹法表明体晶样品的尾迹分量与通过位错排的短路扩散有关。用位错分析确定扩散的尾迹分布特性和在缺陷结构D_(Hg)内估计了汞扩散系数。在饱和汞分压下测量晶格扩散系数D_(Hg)=2×10~4exp{-1.1eV/kT}cm~2s~(-1)。外延样品扩散汞的表面浓度大约为体晶Hg_(1-x)Cd_xTe的1/40。
The self-diffusion of mercury in Hg 1-x Cd x Te was studied by using radiotracers between 250 and 400 ° C. It was found that there were two components of diffusion distribution. The contact auto-ray was used to show that the wake component of the bulk crystal By dislocation row short-circuit diffusion related. Dislocation analysis was used to determine the distribution characteristics of diffusion wake and mercury diffusion coefficient was estimated in the defect structure D_ (Hg). The lattice diffusion coefficient D_ (Hg) = 2 × 10 ~ 4exp {-1.1eV / kT} cm ~ 2s ~ (-1) was measured at the partial pressure of saturated mercury. The surface concentration of diffused mercury in epitaxial samples is about 1/40 of that of bulk Hg_ (1-x) Cd_xTe.