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研究了SiO_2/128°Y-X LiNbO_3层状结构的声表面波(SAW)传播特性。用射频(RF)磁控溅射技术制造SiO_2薄膜。利用LiNbO_3晶片上的叉指换能器(IDT)激励和检测瑞利波。这样不仅得到了延迟温度系数(TCD)约为Oppm/℃的良好温度特性,而且其频率特性的寄生信号响应也很小。此外,它的衰减常数也很小,并且层状结构具有很高的机电耦合系数(k~2),约为0.08。通过分析叉指换能器产生的声波,理论上研究了层状结构的寄生信号响应,并发现寄生信号响应很小。
The surface acoustic wave (SAW) propagation behavior of layered structure of SiO_2 / 128 ° Y-X LiNbO_3 was studied. Thin films of SiO2 were fabricated by radio frequency (RF) magnetron sputtering. Rayleigh waves are excited and detected using an interdigital transducer (IDT) on a LiNbO_3 wafer. This results in not only good temperature characteristics with a delay temperature coefficient (TCD) of about 0 ppm / ° C but also small parasitic signal response to frequency characteristics. In addition, its attenuation constant is also small, and the layered structure has a high electromechanical coupling coefficient (k ~ 2) of about 0.08. By analyzing the acoustic wave generated by the interdigital transducer, the parasitic signal response of the layered structure is theoretically studied and the parasitic signal response is found to be small.