在硅基上通过氢氧焰淀积的 Si O2 ,厚度达到了 2 0 μm;通过掺 Ge增加芯层的折射率 ,折射率比小于 1% ,并可调 ;用反应离子刻蚀工艺对波导的芯层进行刻蚀 ,刻蚀深度为 6 μm,刻蚀深宽比大于 10 ;波导传输损耗小于0 .6 d B/ cm(λ=1.5 5 μm) ,并对波导的损耗机理和测试进行了分析与研究 .另外 ,为实现光纤与波导的耦合 ,结合微电子机械系统技术 ,在波导基片上制作了光纤对准 V形槽 The Si O2 deposited on the silicon substrate by the oxyhydrogen flame has a thickness of 20 μm. The refractive index of the core layer is increased by adding Ge, and the refractive index ratio is less than 1%, and is adjustable. By using the reactive ion etching process, , The etching depth is 6 μm and the etching aspect ratio is greater than 10; the waveguide transmission loss is less than 0.6 d B / cm (λ = 1.5 5 μm), and the waveguide loss mechanism and testing are performed Analysis and research.In addition, in order to realize the coupling between optical fiber and waveguide, combined with the microelectromechanical system technology, the optical fiber alignment V-groove