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氢气氛区熔硅电晶中含有较高浓度(～10~(16)/cm~3)的氢,在常温下,一部分氢与单晶中的硅原子通过硅氢链相结合,硅氢键的存在对硅单晶的性能有很大的影响。X射线形藐观察发现,当氢气氛区熔硅单晶样品温度升至660℃左右时,样品内突发性地产生大量宏观缺陷,经过1000℃一小时的热处理,样品内产生许多雪花形缺陷,文献[2]的作者提出了硅氢键断裂和缺陷形成过程的机理。以上这些发现和微观机理,需要进一步的实验验证。
In the hydrogen atmosphere, the high melting point (~ 10 ~ (16) / cm ~ 3) hydrogen is contained in the silicon melt. At normal temperature, a part of the hydrogen is bound to the silicon atom in the single crystal through the silicon hydride chain. The presence of silicon single crystal has a great impact on the performance. X-ray observation showed that when the temperature of the molten silicon single-crystal sample in hydrogen atmosphere increased to about 660 ℃, a large number of macroscopic defects were generated in the sample. After one hour of heat treatment at 1000 ℃, many snowflake-shaped defects , The author of [2] proposed the mechanism of silicon-hydrogen bond cleavage and defect formation process. These findings and microscopic mechanisms require further experimental verification.