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采用可控的金属沾污程序 ,最大金属表面浓度控制在 10 1 2 cm- 2数量级 ,来模拟清洗工艺最大可能金属沾污表面浓度 .利用斜坡电流应力和栅注入方式测量本征电荷击穿来评估超薄栅氧特性和金属沾污效应 .研究了金属锆和钽沾污对超薄栅氧完整性的影响 .实验结果表明金属锆沾污对超薄栅氧完整性具有最严重危害 ;金属钽沾污的栅氧发生早期击穿现象 ,而金属铝沾污对超薄栅氧完整性没有明显影响 .
Using a controlled metal contamination procedure, the maximum metal surface concentration is controlled on the order of 10 12 cm-2 to simulate the maximum possible metal-contaminated surface concentration in the cleaning process The intrinsic charge breakdown is measured using ramp current stress and gate injection The effects of ultra-thin gate oxide and metal contamination were evaluated.The effects of metal zirconium and tantalum contamination on the integrity of ultra-thin gate oxide were investigated.The experimental results show that metal zirconium contamination has the most serious damage to ultra-thin gate oxide integrity, The tantalum-stained gate oxide undergoes early breakdown and the aluminum contamination has no significant effect on the integrity of the ultra-thin gate oxide.