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用金属有机物化学气相沉积技术在蓝宝石衬底上外延了高P组分的GaN1 -xPx薄膜 利用x射线衍射仪和拉曼光谱仪研究了P对GaN1 -xPx 晶体结构的影响 .研究结果表明 :随着P组分比的增加 ,GaN1 -xPx(0 0 0 2 )衍射峰逐渐向小角度移动 ,即晶格常数变大 ;与非掺杂GaN相比 ,GaN1 -xPx 薄膜的拉曼光谱中出现了 4个新的振动模式 ,将它们分别归因于P族团引起的准局部振动模式、Ga—P键振动引起的间隙模 ,以及来自缺陷引起的无序激活散射 .同时 ,随着P组分比的增加 ,A1 (LO)模式的频率向低频方向移动 ,这种红移现象起因于合金化和应变的影响
X-ray diffractometry and Raman spectroscopy were used to investigate the effect of P on the crystal structure of GaN1-xPx by metal organic chemical vapor deposition (CVD) on GaN-xPx thin films with high P content on sapphire substrates. The results show that with the Compared with non-doped GaN, the Raman spectra of GaN1-xPx thin films appear in the GaN1-xPx (0 0 0 2) diffraction peak gradually shifted to a small angle, that is, the lattice constant becomes larger Four new vibration modes are attributed to the quasi- local vibration mode caused by the P group, the gap mode caused by the vibration of the Ga-P bond, and the disordered activation scattering caused by the defects, respectively. Meanwhile, as the P component Ratio increases, the frequency of the A1 (LO) mode shifts to the lower frequency, and this red shift phenomenon is caused by alloying and strain