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报道了Ｋａ 波段功率ＰＨＥＭＴ的设计和研制结果。利用双平面掺杂的ＡｌＧａＡｓ／ＩｎＧａＡｓＰＨＥＭＴ材料，采用０．２ μｍ 的Ｔ型栅及槽型通孔接地技术，研制的功率ＰＨＥＭＴ的初步测试结果为：Ｉｄｓｓ：３６５ ｍ Ａ／ｍ ｍ ；ｇｍ ０：３２０ ｍ Ｓ／ｍ ｍ ；Ｖｐ：－ １．０～－ ２．０ Ｖ。总栅宽为７５０ μｍ 的功率器件在频率为３３ ＧＨｚ时，输出功率大于２８０ ｍ Ｗ，功率密度达到３８０ ｍ Ｗ／ｍ ｍ ，增益大于６ ｄＢ。
The design and development results of Ka-band PHEMT are reported. The preliminary test results of the power PHEMT developed by using the double-plane-doped AlGaAs / InGaAsPHEMT material with a 0.2 μm T-gate and trench through-hole grounding technique are: Idss: 365 m A / m m; gm 0: 320 m S / m m; Vp: -1.0 to 2.0 V. With a total gate width of 750 μm, the output power is greater than 280 mW at 33 GHz, the power density is 380 mW / m and the gain is greater than 6 dB.