【摘 要】
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In this work, the two-dimensional MoS2film was prepared by sulfuring the molybdenum atomic layer on SiO2/Si substrate. The reaction temperature, heating rate, h
【机 构】
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College of Materials Science and Engineering, University of Shanghai for Science&Technology, Shangha
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In this work, the two-dimensional MoS2film was prepared by sulfuring the molybdenum atomic layer on SiO2/Si substrate. The reaction temperature, heating rate, holding time and carrier gas flow rate were investigated comprehensively. The quality of MoS2film was characterized by optical microscopy, atomic force microscopy, Raman and photoluminescence spectroscopy. The characterization results showed that the optimum synthesis parameters were heating rate of 25 ℃/min, reaction temperature of 750 ℃, holding time of 30 min and carrier gas velocity of 100 sccm. The MoS2 gas sensor was fabricated and its gas sensing performance was tested. The test results indicated that the sensor had a good response to both reducing gas (NH3) and oxidizing gas (NO2) at room temperature. The sensitivity to 100 ppm of NO2 was 31.3％, and the response/recovery times were 4 s and 5 s, respectively. In addition, the limit of detection could be as low as 1 ppm. This work helps us to develop low power and integrable room temperature NO2 sensors.
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