【摘 要】
：
Room-temperature negative differential resistance (NDR) characteristics are observed in a nanocrystalline Si quantum dot (nc-Si QD) floating-gate MOS structure,
【机 构】
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State Key Laboratory of Solid State Microstructures, Jiangsu Province Key Laboratory of Photonic and
论文部分内容阅读
Room-temperature negative differential resistance (NDR) characteristics are observed in a nanocrystalline Si quantum dot (nc-Si QD) floating-gate MOS structure,which is fabricated by plasma-enhanced chemical vapor deposition.Clear multi-NDR peaks for the electrons and holes,shown in the I-V curves,which are significant for the application of multiple value memory and logic,are proved to be induced by electron and hole resonant tunneling into the nc-Si QDs from the substrate.The calculation results indicate that these NDR characteristics should be associated with the Coulomb blockade effect and the quantum confinement effect of the nc-Si QDs.Furthermore,low-temperature I-V characteristics are also investigated to confirm the room-temperature results.
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