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提出了一种基于阈值电压Vth与热电压VT相互补偿的新型非带隙CMOS电压基准源。采用一种新型电路结构提取正比于Vth的电流,通过自偏置电流镜结构获得正比于两个三极管VBE之差的电流输出,两者在公共电阻上的线性叠加,实现Vth与VT的相互补偿。基于3·3V电源电压0·35μm标准CMOS工艺模型在CadanceSpectre仿真环境下对电路进行模拟验证,获得以下结果:输出基准电压为716·828mV,在-55℃~+125℃范围内,其温度系数为3·53×10-6m/℃;VDD在2·7V~4V之间变化时,输出电压变化率为1·346%。
A novel non-band gap CMOS voltage reference based on the mutual compensation of threshold voltage Vth and thermal voltage VT is proposed. A novel circuit structure is used to extract the current proportional to Vth. The current output proportional to the difference between the two transistors VBE is obtained by a self-bias current mirror structure, and the two are linearly superimposed on the common resistor to achieve mutual compensation of Vth and VT . Based on the 3.3-V power supply voltage of 0.35μm standard CMOS process model in the CadanceSpectre simulation environment to simulate the circuit, the following results: The output voltage reference is 716 · 828mV, in the -55 ℃ ~ +125 ℃ range, the temperature coefficient Is 3 · 53 × 10-6m / ℃; When the change of VDD is between 2.7V ~ 4V, the output voltage change rate is 1.346%.