用工业型脉冲等离子体化学气相沉积（ＰＣＶＤ）设备、在高速钢（Ｗ１８Ｃｒ４Ｖ）和钴基硬质合金 ＳＣ３０基材表面沉积了 ＴｉＮ薄膜，用扫描电镜（ＳＥＭ）和连续加载压入仪研究了脉冲电压幅值对膜基结合行为的影响．结果表明随脉冲电压在５５０－７５０ Ｖ之间逐渐增大， ＴｉＮ晶粒增大，膜层脆性增加。沉积速率提高、但膜层结合力下降；在 ６５０ Ｖ以下膜基界面有一伪扩散层出现，超过６５０ Ｖ后伪扩散层消失，这是改善膜基结合行为的关键因素，讨论了伪扩散层形成的可能机制 TiN thin films were deposited on the surface of high speed steel (W18Cr4V) and cobalt-based cemented carbide SC30 substrates by using industrial pulse plasma chemical vapor deposition (PCVD) equipment. The pulse Effect of Voltage Amplitude on Film Binding Behavior. The results show that as the pulse voltage gradually increases from 550 to 750 V, the TiN grains increase and the brittleness of the film increases. The deposition rate is increased, but the adhesion of the film is decreased. A pseudo-diffusion layer appears at the interface of film below 650 V, and the pseudo-diffusion layer disappears when the thickness exceeds 650 V. This is the key factor to improve the film- Possible mechanism