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A new method for increasing laser induced damage threshold(LIDT)of dielectric antireflection(AR) coating is proposed.Compared with AR film stack of H2.5L(H:HfO_2,L:SiO_2)on BK7 substrate,SiO_2 interfacial layer with four quarter wavelength optical thickness(QWOT)is deposited on the substrate before the preparation of H2.5L film.It is found that the introduction of SiO_2 interfacial layer with a certain thickness is effective and flexible to increase the LIDT of dielectric AR coatings.The measured LIDT is enhanced by about 50%,while remaining the low reflectivity with less than 0.09% at the center wavelength of 1064 nm.Detailed mechanisms of the LIDT enhancement are discussed.
A new method for increasing laser induced damage threshold (LIDT) of dielectric antireflection (AR) coating is proposed. Compared with AR film stack of H2.5L (H: HfO_2, L: SiO_2) on BK7 substrate, SiO_2 interfacial layer with four quarter wavelength optical thickness (QWOT) is deposited on the substrate before the preparation of H2.5L film. It is found that the introduction of SiO 2 interfacial layer with a certain thickness is effective and flexible to increase the LIDT of dielectric AR coatings.The measured LIDT is enhanced by about 50%, while remaining the low reflectivity with less than 0.09% at the center wavelength of 1064 nm. Dtailed mechanisms of the LIDT enhancement are discussed.