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高深宽比结构是提高微器件性能的重要环节之一。利用RIE深刻技术加工具有高深宽比结构的图形 ,方法简单 :它不象LIGA技术那样 ,需昂贵的同步辐射光源和特制的掩模板 ,对光刻胶的要求也不是特别高 ,利用这种技术深刻蚀PMMA膜 ,以Ni作掩模 ,采用普通的光刻胶曝光技术和湿法刻蚀的方法将Ni掩模图形化 ,然后利用O2 RIE技术刻蚀PMMA ,可以得到深度达 1 0 0 μm ,深宽比大于 1 0的微结构 ,图形表面平整 ,侧壁光滑垂直。在刻蚀过程中 ,氧气压、刻蚀功率等工艺参数对刻蚀结果影响较大。
High aspect ratio structure is to improve the performance of micro-devices one of the important aspects. The use of RIE deep processing of graphics with high aspect ratio is simple: it does not require expensive synchrotron radiation sources and a special reticle, unlike the LIGA technology, and does not require particularly high photoresist. With this technique The PMMA film is deeply etched, the Ni mask is patterned by using common photoresist exposure technique and wet etching method, and then the PMMA film is etched by using O2 RIE technique to obtain a depth of 1000 μm , The aspect ratio is greater than 10 micro-structure, the surface smooth graphics, vertical sidewall smooth. In the etching process, oxygen pressure, etching power and other process parameters have a greater impact on the etching results.