单层硫化钼(MoS2)是具有直接帯隙1.8 eV的二维半导体,因其特殊的六方晶系层状结构,而具有优异的物理和化学性质。简要介绍了MoS2材料的几种主要制备方法:如高温硫化法、水热法以及表面活性剂促助法等,讨论了各种制备方法在国内外的研究现状及优缺点。给出了单层MoS2在晶体管、集成电路、逻辑运算等方面的一些应用。与硅晶体管相比其晶体管体积更小、更省电,并可减少短通道效应,电流开/关比例高于1010。这些应用说明了其可被广泛应用于未来的纳米电子器件。最后,对MoS2未来的发展方向进行了展望,认为工艺制备方法有待进一步改善,单层MoS2的应用领域也有待进一步深入拓展。 Single layer molybdenum sulfide (MoS2) is a two-dimensional semiconductor with a direct gap of 1.8 eV, which has excellent physical and chemical properties due to its special hexagonal layered structure. Several main preparation methods of MoS2 materials are introduced briefly, such as high temperature vulcanization method, hydrothermal method and surfactant promoting method. The current research status and advantages and disadvantages of various preparation methods are discussed. Some applications of single-layer MoS2 in transistors, integrated circuits, logic operations and so on are given. Compared with silicon transistors, the transistors are smaller, more power efficient and can reduce short-channel effects with a current on / off ratio higher than 1010. These applications illustrate that it can be widely used in the future of nanoelectronic devices. Finally, the future direction of MoS2 is prospected. It is considered that the preparation method of the MoS2 needs to be further improved, and the application of single-layer MoS2 needs to be further expanded.