日前消息,RF解决方案供应商Qorvo(原RFMD和TriQuint)宣布,已成功地将专有的碳化硅(SiC)基QGaN25氮化镓(GaN)工艺技术扩展用于在6英寸晶圆上生产单片微波集成电路(MMIC)。预计从4英寸过渡到6英寸晶圆,大约能使Qorvo公司的碳化硅基氮化镓生产能力增加一倍,并且有利于降低制造成本——对价格实惠的射频器件生产,能起到显著的推进作用。 Recently, Qorvo (formerly RFMD and TriQuint), an RF solution provider, announced that it has successfully extended its proprietary silicon carbide (SiC) -based QGaN25 gallium nitride (GaN) process technology to single-wafer production on a 6-inch wafer Chip Microwave Integrated Circuit (MMIC). The transition from 4-inch to 6-inch wafers is expected to double Qorvo's gallium-nitride-based gallium nitride production capacity and help reduce manufacturing costs - for cost-effective production of RF devices that can make significant Promote the role.