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Cu2ZnSn(S,Se)4(CZTSSe) thin film was prepared using a simple two-step approach based on the single-source evaporation and synchronous sulfo-selenization.Composition,microstructure,morphology,and properties of the asprepared CZTSSe thin films were investigated.XRD and Raman patterns confirmed the formation of single-phase CZTSSe solid solutions.SEM results showed that the CZTSSe thin film had a uniform morphology and large grains.EDS results revealed the composition of CZTSSe film was Cu:Zn:Sn:S:Se = 23.7:12.6:12.2:37.7:13.8(in at%),which was in accordance with the stoichiometric Cu2ZnSn(S,Se)4.The optical band gap of CZTSSe thin film evaluated from its UV–Vis spectrum was 1.33 eV.The resistivity,carrier concentration,and mobility were 0.53 X cm,7.9 9 1018cm3,and 7.5 cm2/(Vs),respectively.
Cu2ZnSn (S, Se) 4 thin film was prepared using a simple two-step approach based on the single-source evaporation and synchronous sulfo-selenization. Composition, microstructure, morphology, and properties of the asprepared CZTSSe thin films were investigated . XRD and Raman patterns confirmed the formation of single-phase CZTSSe solid solutions. SEM results showed that the CZTSSe thin film had a uniform morphology and large grains. EDS results revealed the composition of CZTSSe film was Cu: Zn: Sn: S: Se = 23.7: 12.6: 12.2: 37.7: 13.8 (in at%), which was in accordance with the stoichiometric Cu2ZnSn (S, Se) 4. The optical band gap of CZTSSe thin film evaluated from its UV-Vis spectrum was 1.33 eV. The resistivity, carrier concentration, and mobility were 0.53 X cm, 7.9 9 1018 cm3, and 7.5 cm2 / (Vs), respectively.