场效应迁移率是描述有机薄膜晶体管(OTFT)性能的重要参数之一,目前OTFT场效应迁移率主要根据实验测得OTFT电特性曲线通过拟合计算方法获得。本文针对这种方法进行深入研究发现,OTFT的场效应迁移率与其工作状态有关。在线性工作状态下,OTFT的线性区场效应迁移率随着栅电压的增加而增大;在饱和工作状态下,当漏电压V_D>1.5VG_(max)时,饱和区场效应迁移率为一定值,表明采用此值表征OTFT的电性能更加客观和精确。 The field-effect mobility is one of the most important parameters for describing the performance of an organic thin film transistor (OTFT). At present, the field-effect mobility of the OTFT is mainly obtained by the fitting calculation method according to the measured OTFT electrical characteristic curve. In this paper, in-depth study of this method found that OTFT field-effect mobility and its work status. Under the linear operating condition, the linear field-effect mobility of the OTFT increases with the increase of the gate voltage. Under the saturation condition, the field-effect mobility of the saturated region is constant when the drain voltage V_D is greater than 1.5VG_ (max) Value, indicating that using this value to characterize the OTFT’s electrical performance is more objective and accurate.