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采用闭管扩散方式实现了Zn元素在晶格匹配InP/In0.53Ga0.47As及晶格失配InP/In0.82Ga0.18As两种异质结构材料中的P型掺杂,利用二次离子质谱(SIMS)以及扫描电容显微技术(SCM)对Zn在两种材料中的扩散机制进行了研究。SIMS测试表明:Zn元素在晶格失配材料中的扩散速度远大于在晶格匹配材料中的扩散速度,而SCM测试表明:两种材料中的实际PN结深度与SIMS测得的Zn扩散深度之间存在一定的差值,这是由于扩散进入材料中的Zn元素并没有被完全激活,而晶格失配材料中Zn的激活效率相对更低,使得晶格失配材料中Zn元素扩散深度与PN结深度的差值更大。SCM法是一种新颖快捷的半导体结深测试法,对于半导体器件工艺研究具有重要的指导意义。
P-type doping of Zn in lattice-matched InP / In0.53Ga0.47As and lattice-mismatched InP / In0.82Ga0.18As heterostructures was achieved by closed-tube diffusion. (SIMS) and scanning capacitance microscopy (SCM) were used to study the diffusion mechanism of Zn in two materials. The SIMS results show that the diffusion speed of Zn element in the lattice mismatch material is much faster than that in the lattice matched material, while the SCM test shows that the actual PN junction depth in the two materials and the SIM diffusion depth , Which is due to diffusion of Zn into the material is not fully activated, and the lattice mismatch of Zn activation in the material is relatively lower efficiency, making the lattice mismatch material Zn diffusion depth The difference between the PN junction depth and the greater. SCM method is a novel and fast semiconductor junction depth test method, which has important guiding significance for the research of semiconductor device technology.