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以脉冲激光沉积(PLD)的CNx材料为靶源,以单晶Si片为衬底,在N2气压为2～11Pa下PLD制备了CNx薄膜。采用X射线光电子能谱(XPS)、拉曼(Raman)光谱、扫描电子显微镜(SEM)和球盘式摩擦磨损试验机分别对薄膜的化学成分、价键状态、表面形貌和摩擦性能进行了表征。结果表明:低沉积气压导致薄膜N含量的退化及耐磨性能的下降;沉积气压介于5～8Pa时最利于sp3杂化键的形成,且薄膜的N含量缓慢下降,膜中比值xsp2/xsp3和ID/IG均减小,xsp2C-N/xsp3C-N增加并趋于恒定,薄膜的耐磨性较好(约2.7～4.3×10-15 m3.N-1.m-1),但摩擦系数相对较高(约0.24～0.25);过高的气压导致膜层中N含量的下降和石墨化程度的增加,薄膜摩擦系数较低(约0.19),但耐磨性呈下降趋势。
The CNx thin film was prepared by pulsed laser deposition (PLD) of CNx material with single crystal Si as substrate and PLD at N2 pressure of 2 ~ 11 Pa. The chemical composition, valence state, surface morphology and tribological properties of the films were investigated by X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, scanning electron microscopy (SEM) and ball disc friction and wear testing machine Characterization. The results show that low deposition pressure leads to the degradation of N content and wear resistance. The deposition pressure is most favorable for the formation of sp3 hybridization when the pressure is between 5 and 8 Pa, and the N content decreases slowly. The ratio xsp2 / xsp3 And ID / IG decreased, xsp2C-N / xsp3C-N increased and tended to be constant, and the abrasion resistance of the film was good (about 2.7 ~ 4.3 × 10-15 m3.N-1.m-1) The coefficient is relatively high (about 0.24 ~ 0.25); too high pressure causes the decrease of N content and graphitization in the film, the friction coefficient of the film is low (about 0.19), but the wear resistance decreases.