最近天津半导体技术研究所研制出非破坏性快速测量N/P型外延层电阻率的新型仪器.适用于有埋层图形的集成电路芯片(N-N_■~+/P结构)和无埋层的N/P型外延片.该仪器测量电阻率的重复性优于四探针,操作简单、测量迅速、使用方便,可广泛应用于集成电路研制线上的工艺监测和N/P外延片生产的质量检验.与 Recently, Tianjin Institute of Semiconductor Technology developed a new non-destructive instrument for quickly measuring the resistivity of N / P epitaxial layers, which is suitable for the fabrication of integrated circuit chips with buried patterns (N-N_ ■ ~ + / P structures) Of the N / P-type epitaxial wafers. The repeatability of the instrument to measure the resistivity than the four-probe, simple operation, rapid measurement, easy to use, can be widely used in integrated circuit development process monitoring and N / P epitaxial wafer production Quality inspection