论文部分内容阅读
随着微电子技术的普及产业化,对半导体薄膜材料的硬度测量需求,越加迫切。从七十年代末以来,对用于薄膜材料表面硬度测量方法、装置进行过种种研究,见下表:1998年日本NEC柳沢发表了用层积压电元件加荷,电子天秤和光学法测负荷和位移的新型薄膜硬度计,其最重要的特点是负荷、位移测量互不干扰,提高了测量精度。此外该装置还可进行薄膜的杨式模量试验。
With the popularity of microelectronics technology, the semiconductor thin film material hardness measurement needs more urgent. Since the late seventies, a variety of studies have been carried out on the methods and devices for measuring the surface hardness of thin film materials, as shown in the following table: In 1998, NEC Japan published a report by using laminated piezoelectric elements, electronic scales and optical methods to measure the load and Displacement of the new film hardness, the most important feature is the load, displacement measurement without interference, improve the measurement accuracy. In addition, the device is also capable of film Young’s modulus test.