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创维公司正在开发一种高创新性的双极场效应晶体管(BiFET)工艺技术用于其GaAs基产品。该公司称,这将使其代表性产品更加五彩缤纷,并使得当今小型手持通信装置制造厂家能更加节约产品开发成本。这种BiFET技术是将InGaP基HBTs和FETs集成在同一GaAs衬底上的。将FETs加入到高产出60
Skyworth is developing a highly innovative bipolar field-effect transistor (BiFET) process technology for its GaAs-based products. The company said it will make its representative products more colorful and make today’s smaller handset manufacturers more economical in product development. This BiFET technology integrates InGaP-based HBTs and FETs on the same GaAs substrate. Add FETs to a high output of 60