Ca2Gd8(SiO4)6O2∶ A(A=Pb2+, Tm3+)phosphors were prepared through the sol-gel process. X-ray diffraction(XRD), scanning electron microscopy(SEM)and photoluminesc
Thin strain-relaxed Si0.8Ge0.2 films (57.6 nm) on the 30 keV Ar+ ion implantation Si substrates for different dose (1 × 1014, 5 × 1014, 3 × 1015
CoFeZrRe amorphous materials with higher ferromagnetic loss over microwave range were prepared by mechanical alloying (MA). The technical parameters on electrom