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本文分析和计算了基区不同Ge含量的器件在碰撞电离和雪崩击穿效应下的电流和电压特性,结果表明,在其它参数相同的条件下,基区Ge含量越高的器件,虽然直流增益得到很大提高,但伴随着器件更容易发生载流子碰撞电离引起的基极电流反向和大注入下的基区push-out效应,同时器件共射击穿电压BVCEO也会大大的降低.由于在不同的电路中对器件的性能要求是不同的,本文的结论在具体的模拟电路中采用SiGeHBT器件的设计提供了指导
In this paper, the current and voltage characteristics of devices with different Ge contents in the base region under impact ionization and avalanche breakdown are analyzed and calculated. The results show that the device with higher Ge content in the base region under the same conditions of other parameters, although the DC gain However, with the device being more prone to the base current push-out effect caused by charge-ion impact ionization and large injection, BVCEO will be greatly reduced. Since the performance requirements for the devices are different in different circuits, the conclusions of this paper provide guidance on the design of SiGeHBT devices in specific analog circuits