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在低压无磨料条件下,利用碱性FA/O型螯合剂具有极强螯合能力的特性,对铜互连线进行化学机械平坦化,获得了高抛光速率和表面一致性。提出了铜表面低压无磨料抛光技术的平坦化原理,在分析了抛光液化学组分与铜化学反应机理的基础上,对抛光液中的主要成分FA/O型螯合剂、氧化剂的配比和抛光工艺参数压力、抛光机转速进行了研究。结果表明:在压力为6.34kPa和抛光机转速为60r/min时,抛光液中添加5%螯合剂与1%氧化剂(体积分数,下同),抛光速率为1825nm/min,表面非均匀性为0.15。
Under the condition of low pressure and no abrasive, the copper interconnection line is chemically and mechanically planarized by utilizing the strong chelating ability of the basic FA / O chelating agent, and the high polishing rate and the surface consistency are obtained. Based on the analysis of the chemical composition of the polishing solution and the mechanism of the chemical reaction of copper, the flattening principle of the low pressure non-abrasive polishing technique on the copper surface was proposed. The ratio of the FA / O chelating agent and oxidizing agent, which is the main component in the polishing solution, Polishing process parameters pressure, polishing machine speed was studied. The results show that when the pressure is 6.34kPa and the speed of polishing machine is 60r / min, 5% chelating agent and 1% oxidizer (volume fraction, the same below) are added to the polishing solution, the polishing rate is 1825nm / min and the surface nonuniformity is 0.15.