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用一种联机计算机控制测量系统收集和分析了离子注入MOS结构的1MH_Z电容-电压(C-V)数据。这种分析算法考虑了耗尽区宽度小于两倍德拜长度时的多数载流子分布,因而它对于半导体中直到半导体-氧化层界面的注入杂质分布测量都是有效的。本文中给出了10~(11)—10~(22)厘米~(-2)范围低剂量注入情况下的C-V数据和注入离子的分布。这种测量技术能灵敏地指明低剂量注入杂质的分布情况,因而可用于MOS FET阈值电压调整注入中的工艺过程控制以及其它低剂量注入应用场合。
1MH_Z capacitance-voltage (C-V) data of the ion-implanted MOS structure was collected and analyzed using an on-line computer controlled measurement system. This analysis algorithm takes into account the majority carrier distribution when the depletion zone width is less than twice Debye length and is therefore valid for the measurement of implant impurity distribution up to the semiconductor-oxide interface in the semiconductor. In this paper, the C-V data and the distribution of implanted ions in the low dose range of 10 ~ (11) -10 ~ (22) cm ~ (-2) are given. This measurement technique provides a sensitive indication of the distribution of low-dose implanted impurities and can therefore be used for process control in MOS FET threshold-voltage injection and other low-dose injection applications.