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The preparation of high quality ZnO/Si substrates for the growth of GaN blue light emitting materials is considered. ZnO thin films have been deposited on Si (100) and Si (111) substrates by conventional magnetron sputtering. Morphology, crystallinity and c-axis preferred orientation of ZnO thin films have been investigated by transmitting electron microscopy (TEM), X-ray diffraction (XRD) and X-ray rocking curve (XRC). It is proved that the ZnO thin films have perfect structure. The full-width-at-half-maximum (FWHM) of the ZnO(002) XRC of these films is about 1°, while the minimum is 0.353°. This result is better than the minimum FWHM (about 2°) reported by other research groups. Moreover, comparison and discussion are given on film structure of ZnO/Si(100) and ZnO/Si(111).
ZnO thin films have been deposited on Si (100) and Si (111) substrates by conventional magnetron sputtering. Morphology, crystallinity and c-axis preferred orientation of ZnO thin films have been investigated by transmitting electron microscopy (TEM), X-ray diffraction (XRD) and X-ray rocking curve (XRC). It is demonstrated that the ZnO thin films have perfect structure. -at-half-maximum (FWHM) of the ZnO (002) XRC of these films is about 1 ° while the minimum is 0.353 °. This result is better than the minimum FWHM (about 2 °) reported by other research groups. Moreover, comparison and discussion are given on the film structure of ZnO / Si (100) and ZnO / Si (111).