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高分辨率x射线衍射技术被应用于Hg1-xCdxTe分子束外延薄膜晶格参数的测量及其晶格应变状态的研究,研究发现Hg1-xCdxTe分子束外延薄膜内既存在正应变也存在剪切应变.通过应用晶体弹性理论,对Hg1-xCdxTe分子束外延薄膜的应变状态进行了定量的分析与计算,获得了Hg1-xCdxTe分子束外延薄膜在完全弛豫状态下的晶格参数,从而得到了Hg1-xCdxTe分子束外延薄膜晶格参数与组分的关系,该关系符合Vegard’s定律,而不是早期研究所给出的Higgins公式.研究还发现,根据对称衍射测量所得到的(224)晶面间距,可直接计算出Hg1-xCdxTe分子束外延薄膜晶格参数,并用Vegard’s定律确定组分的方法,可作为估算Hg1-xCdxTe分子束外延材料组分的常规技术,其组分的测量误差在0·01左右.
The high-resolution X-ray diffraction technique was applied to the measurement of lattice parameters and the lattice strain state of the Hg1-xCdxTe molecular beam epitaxial films. It was found that both the normal strain and the shear strain exist in the Hg1-xCdxTe molecular beam epitaxial films The strain state of the Hg1-xCdxTe molecular beam epitaxial thin films was quantitatively analyzed and calculated by applying the crystal elasticity theory, and the lattice parameters of the Hg1-xCdxTe molecular beam epitaxial films in the fully relaxed state were obtained, and the Hg1 The relationship between lattice parameters and composition of -xCdxTe molecular beam epitaxy films is in agreement with Vegard’s law, rather than the Higgins formula given in earlier studies. The study also found that based on the (224) interplanar spacings measured by symmetric diffraction, The lattice parameters of Hg1-xCdxTe molecular beam epitaxy films can be directly calculated and determined by Vegard’s law, which can be used as a routine technique to estimate the molecular composition of Hg1-xCdxTe molecular beam epitaxy. The measurement error of its components is 0.01 about.