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采用金属有机化合物气相淀积方法生长了900nm的三叠层隧道级联激光器。针对隧道级联激光器存在工作电压高、材料各层的光场耦合等问题,分别采用δ掺杂、扩展波导等技术对激光器结构进行了优化,并通过模拟计算对隧道结耗尽区宽度进行了优化。通过优化隧道结δ掺杂的生长条件,得到n+GaAs的掺杂浓度大于1×1019/cm3,使工作电压下降1V;通过采用扩展波导,使垂直发散角由常规结构的35°减小到20°。将900nm的三叠层隧道级联激光器制作成条宽300μm、腔长800μm的条形激光器,采用同轴封装形式,在20A的脉冲工作电流下,输出功率达到55W,斜率效率达到2.9W/A,以上指标是普通激光器的3倍。
A 900 nm triple-layered tunneling cascade laser was grown by metal-organic-compound vapor deposition. Aiming at the problems of high operating voltage and optical field coupling in various layers of the cascade laser, the structure of the laser is optimized by using δ-doping and extended waveguide respectively. The width of the depletion region in the tunnel junction is calculated by simulation optimization. By optimizing the δ-doping growth conditions of the tunnel junction, the doping concentration of n + GaAs is larger than 1 × 10 19 / cm 3 and the operating voltage is decreased by 1V. By adopting the extended waveguide, the vertical divergence angle is reduced from 35 ° of the conventional structure to 20 °. A 900 nm triple-layered tunnel cascade laser was fabricated into a bar laser with a strip width of 300 μm and a cavity length of 800 μm. The coaxial laser diode with a 20 A pulse output current of 55 W achieved a slope efficiency of 2.9 W / A , The above indicators are three times the normal laser.