研究了含多层InAs量子点结构的双肖特基势垒的电流输运特性 ,观察到了量子点的电子存储效应及其对电流的调制现象、电流多稳态现象和零点电压漂移现象 .因为多量子点之间存在耦合作用 ,造成器件中的很多亚稳态 .通过器件的输运特性显示出比含单层量子点器件更复杂的结果 .随着外加电压的变化 ,器件经历很多弛豫过程 .这些弛豫过程在电流 电压曲线中造成很多电流跳跃结构和各种噪声结构 The current transport characteristics of double Schottky barrier with multi-layer InAs quantum dot structure were investigated, and the electron storage effect of quantum dots and its modulation of current, current multi-steady state and zero voltage drift were observed. The coupling between multiple quantum dots results in a lot of metastability in the device.The transport properties through the device show more complex results than with single layer quantum dot devices.With the applied voltage changes, the device experiences many relaxation These relaxation processes cause many current-hopping structures and various noise structures in the current-voltage curve