光电压光谱法基于半导体材料的光生伏特效应。当单色光照射到半导体样品的表面或界面势垒区时,如果光子能量hv大于材料的禁带宽度E_g,光子就能激发出电子一空穴对;在势垒区空间电荷电场作用下,这些电子与空穴被置于势垒两侧,从而在被测样品的受光面和非受光面之间形成一定的电位差。当入射光光子能量hv小于材料的禁带宽度E_g时,就不 Photovoltage spectroscopy is based on the photovoltaic effect of semiconductor materials. When the monochromatic light is applied to the surface of the semiconductor sample or to the barrier region of the interface, the photon can excite electron-hole pairs if the photon energy hv is larger than the forbidden band width E_g of the material. Under the space charge electric field in the barrier region, these Electrons and holes are placed on both sides of the barrier, creating a potential difference between the light-receiving surface and the non-light-receiving surface of the sample under test. When the incident photon energy hv is less than the material’s forbidden band width E_g, no