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一种p型应变层超晶格已用调制掺杂技术实现,这种超晶格材料是由不掺杂的ZnSe层和掺Sb的ZnTe层交替生长组成的,电学性质已由霍尔效应测量获得。p型应变层超晶格的空穴迁移率为220—250cm~2/V·s,空穴浓度为3—5×10~(14)/cm~3。
A p-type strained layer superlattice has been achieved with a modulation doping technique that consists of an alternating growth of an undoped ZnSe layer and a Sb-doped ZnTe layer, the electrical properties of which have been measured by Hall effect obtain. The hole mobility of the p-type strained layer superlattice is 220-250 cm -2 / V · s, and the hole concentration is 3-5 × 10-14 / cm -3.