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本文提出了在模拟有浮空场限环(FFLR’s)和横向变掺杂(VLD)结构的表面电场分布中所采用的一种新技术和新的环区边界条件,即低场点(LFP)边界条件。利用该技术在求解Poisson方程时,便能方便迅速正确地对具有上述结终端结构的平面结二极管的反向击穿特性进行二维数值模拟;同时,为进一步克服由于高反偏压导致的低求算效率,本文引入一套与外加偏压相关的归一化参数对Poisson方程进行归一化,并给出归一化参数随外加偏压变化的经验公式。利用上述技术,分别对平面结二极管以及具有双FFLR’s的结构和由五段Gauss掺杂分布形成的VLD的结构的平面结二极管的表面电场进行二维数值分析,得到了满意的结果。
In this paper, we propose a new technique and new boundary conditions for simulating the surface electric field distribution with floating field limit rings (FFLR’s) and lateral variable doping (VLD) structures, ie, low field point (LFP) Boundary conditions. When the Poisson equation is solved by this technique, the two-dimensional numerical simulation of the reverse breakdown behavior of the planar junction diode with the junction and termination structure can be conveniently and quickly performed. In order to further overcome the low reverse bias In this paper, we introduce a set of normalized parameters related to applied bias to normalize the Poisson equation, and give the empirical formula of the normalized parameters with the applied bias voltage. With the above technique, two-dimensional numerical analysis of the planar electric field of the planar junction diode and the structure of the diode with double FFLR’s and the VLD formed by the five Gauss doping distribution are respectively carried out, and satisfactory results are obtained.