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日本研究者在基于自立式氮化镓衬底上制造出的垂直结构的氮化镓p-n二极管中实现突破性水平的击穿电压和较低的导通电阻。这一产品采用三层漂移结构。其中,靠近p型氮化镓的漂移层结构采用轻掺杂方法,以抑制p-n结的峰值场,支持更高的电压。第二层经适度掺杂,可以降低导通电阻。研究者团队来自日本法政大学,Quantum Spread公司,Hitachi Metal subsidary Sciocs公司,他们在设计器件时采用的是2英寸自立式氮化镓衬底,采用
Japanese researchers have achieved breakthrough levels of breakdown voltage and lower on-resistance in gallium nitride p-n diodes based on vertical structures fabricated on free-standing gallium nitride substrates. This product uses a three-layer drift structure. Among them, the drift layer structure close to the p-type gallium nitride adopts a light doping method to suppress the peak field of the p-n junction and support a higher voltage. The second layer is moderately doped, can reduce the on-resistance. The team of researchers came from Japan’s Hosei University, Quantum Spread and Hitachi Metal subsidary Sciocs, who designed the device as a 2-inch free-standing gallium nitride substrate using