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利用深能级瞬态谱（ Ｄ Ｌ Ｔ Ｓ）和瞬态光电阻率谱（ Ｔ Ｐ Ｒ Ｓ）研究了利用金属有机物化学气相沉淀（ Ｍ Ｏ Ｃ Ｖ Ｄ）方法生长的未有意掺杂的 Ｉｎ１－ ｘ Ｇａｘ Ｐ中缺陷对载流子的俘获和发射过程。利用 Ｄ Ｌ Ｔ Ｓ测量观测到了一个激活能为０３５ ｅ Ｖ 的缺陷，由 Ｔ Ｐ Ｒ Ｓ测量确定该缺陷的俘获势垒值介于１８０ ｍ ｅ Ｖ 到２４０ｍ ｅ Ｖ 之间。该缺陷的俘获势垒值的大的分布解释为缺陷周围原子重组的微观波动。同时在 Ｔ Ｐ Ｒ Ｓ测量中观测到俘获势垒为００６ ｅ Ｖ 和０４０ ｅ Ｖ 的两个缺陷。
In1, an unintentionally doped In1 grown by a metal organic chemical vapor deposition (MOCVD) method, was investigated by using deep level transient spectroscopy (D L T S) and transient photo-resistivity spectroscopy (T P R S) - x Gax P defects on the carrier capture and launch process. A defect with an activation energy of 035 eV was observed using the D L T S measurement. The trap barrier value of this defect was determined to be between 180 m eV and 240 m eV by T P R S measurement. The large distribution of trapped barrier values for this defect is explained by the micro fluctuations of the atomic recombination around the defect. At the same time, two defects with capture barriers of 006 eV and 040 eV were observed in T P R S measurement.