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随着现代电力电子技术的发展,功率半导体器件的开关速度和功率等级不断提高,关断尖峰成为其面临的非常严峻的问题。提出一种驱动脉冲边沿调制技术,通过调节前脉冲群的密度和宽度,能够在不改变外部电路的情况下,实现对脉冲边沿斜率的调节。将该技术应用于基于数字控制的驱动电路上可以降低功率半导体器件的开关尖峰,并且使驱动电路具有通用性。使用绝缘栅双极晶体管(insulated gate bipolar transistor,IGBT)作为全控型功率半导体器件的典型代表,搭建测试平台,实验结果验证了该方法的正确性和实用性。
With the development of modern power electronic technology, the power semiconductor device switching speed and power levels continue to increase, turn-off spikes become a very serious problem facing it. A driving pulse edge modulation technique is proposed. By adjusting the density and width of the pre-pulse group, the slope of the pulse edge can be adjusted without changing the external circuit. Applying this technology to the digital control based driving circuit can reduce the switching spikes of power semiconductor devices and make the driving circuit more versatile. Using insulated gate bipolar transistor (IGBT) as a typical representative of full-controlled power semiconductor devices, a test platform is set up. The experimental results verify the correctness and practicability of this method.