确定超大规模集成电路的芯片尺寸,速度性能和成品率时,多层金属化是最重要的因素。当超大规模集成电路工艺技术向着特大规模集成(ULSI)和硅片规模(WSI)技术发展时,多层金属化的作用变得更关键。事实上,它成了提高工艺技术的极限因素。实现多层金属化需要仔细考虑导体和绝缘体及其相关的工艺技术。文章给出了确定各种金属化层和材料分类的术语。评述了目前的状况和极限性,讨论了未来的要求。当铝及其合金材料将陆续得到广泛采用时,还需考虑到许多新技术:明显地改进冶金学接触,用多晶硅化物替代多晶硅,硅化物与扩散层的联结,耐熔金属的应用,以及采用改进的具有压缩应力的无缺陷绝缘膜。其他诸如多晶硅化物干法腐蚀,金属结构层的平面化,斜面通道都是极其重要的技术。对于缺陷,小丘和电迁移的改进诊断和特性描述技术也非常重要。 Multi-layer metallization is the most important factor when determining chip size, speed performance, and yield for very large scale integrated circuits. The role of multilayer metallization becomes more critical as VLSI process technology evolves toward ULSI and WSI technologies. In fact, it has become the limiting factor in improving process technology. Achieving multi-layer metallization requires careful consideration of conductors and insulators and their associated process technologies. The article gives the terminology used to determine the classification of various metallization layers and materials. Commented on the current situation and the limits and discussed the future requirements. When aluminum and its alloys are to be widely adopted, many new technologies need to be considered: significant improvements in metallurgical contact, replacement of polycrystalline silicon with polysilicon, bonding of silicide to diffusion layers, use of refractory metals, Improved non-defective insulating film with compressive stress. Other techniques such as dry etching of polycide, planarization of the metal structure, and beveled channels are all extremely important techniques. Improved techniques for diagnosis and characterization of defects, hillocks and electromigration are also important.