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在半导体高压终端研究中，重要的工作之一是终端电场电位分析。国内外以往报道的JTE分析结果除采用解析方法外，数值方法主要采用差分或有限元法。作者利用边界元数值技术，采用“边界元临界电场分析法”，用自主开发的统一的边界元终端分析软件，从新的角度，以单区、双区JTE为例，详细讨论了新的边界元分析法，研究了极值电场分布等情况，得到了物理概念清晰，描述较准确而又简明直观的优化结果。边界元算法独特，优点显著。现有程序不但可用于JTE终端优化分析设计，还可直接用于场板、JTE加场板等终端结构场分析。
In the study of semiconductor high voltage terminal, one of the important work is the terminal electric field potential analysis. In addition to the JTE analysis results reported at home and abroad in addition to the use of analytical methods, numerical methods are mainly differential or finite element method. Using the boundary element numerical technique and the “Boundary Element Critical Electric Field Analysis”, the author uses a unified boundary element terminal analysis software developed by the author. From a new perspective, taking the single-area and dual-area JTE as an example, the authors discuss in detail the new boundary element Analytic method, studied the distribution of extreme electric field and so on, obtained the optimization result that the physical concept is clear, the description is accurate and concise and intuitive. Boundary element algorithm is unique, with significant advantages. The existing program not only can be used for JTE terminal optimization analysis and design, but also can be directly used for the field plate, JTE field plate and other terminal structure field analysis.