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两温区气相输运合成ZnGeP2多晶,易发生化学计量比偏离,产生Ge、Zn3P2等杂相,在合成坩埚(石英安瓿)内壁凝聚一层ZnP2和P的沉积物.通过对合成设备、安瓿尺寸和工艺的改进,采用机械振荡炉体和竖直梯度降温相结合的新工艺,成功地合成出ZnGeP2多晶材料.合成的ZnGeP2多晶,经XRD分析测试,并采用Rietveld法进行全谱拟合精修、计算出各物相的相对含量.结果表明,改进工艺合成的ZnGeP2多晶是高纯单相材料,可用于单晶生长.采用改进工艺合成的ZnGeP2多晶为原料,生长出完整性好的ZnGeP2单晶体,在2.5～8.2μm范围的透过率达60%左右,光学质量较高.
The ZnGeP2 polycrystal is easily transported by gas phase transport in the two temperature zones, resulting in the heterogeneity of Ge, Zn3P2 and other phases, and the deposition of ZnP2 and P in the inner wall of the synthesis crucible (quartz ampoule) Size and process improvement, the ZnGeP2 polycrystalline material was successfully synthesized by a new process combining mechanical oscillation furnace with vertical gradient temperature reduction.The synthesized ZnGeP2 polycrystal was tested by XRD and analyzed by Rietveld method The results show that the modified ZnGeP2 polycrystal is a high purity single phase material and can be used for single crystal growth.The ZnGeP2 polycrystal synthesized by the improved process is used as the raw material to grow a complete Good quality ZnGeP2 single crystal, in the range of 2.5 ~ 8.2μm transmittance of about 60%, higher optical quality.