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采用sol-gel旋涂法在抛光硅<111>晶面生长了高度C轴取向的ZnO薄膜。DSC以及XRD测试结果显示此溶胶系统的最佳退火温度为450℃左右,更高的退火温度将对薄膜的择优取向产生不利的影响。SEM显示薄膜表面致密、均匀、光滑,组成薄膜的颗粒尺寸在50~100nm,并显示出良好的C轴择优取向。
A highly C-axis oriented ZnO thin film was grown on a polished silicon <111> crystal by sol-gel spin coating. DSC and XRD results show that the optimum annealing temperature of this sol system is about 450 ℃, and the higher annealing temperature will adversely affect the preferential orientation of the films. SEM showed that the surface of the film was dense, uniform and smooth. The size of the film was 50 ~ 100nm and showed a good C-axis preferred orientation.